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Tetrakis(dimethylamino)tin
[CAS# 1066-77-9]

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Identification
ClassificationOrganic raw materials >> Organometallic compound >> Organotin
NameTetrakis(dimethylamino)tin
SynonymsTin(IV) dimethylamide
Molecular StructureCAS # 1066-77-9, Tetrakis(dimethylamino)tin
Molecular FormulaC8H24N4Sn
Molecular Weight295.01
CAS Registry Number1066-77-9
EC Number625-403-4
SMILESCN(C)[Sn](N(C)C)(N(C)C)N(C)C
Properties
Boiling point51 °C
Flash point-8 °C
Safety Data
Hazard Symbolssymbol symbol symbol   GHS02;GHS05;GHS07 Danger  Details
Risk StatementsH225-H302+H312+H332-H302-H312-H314-H318-H332  Details
Safety StatementsP210-P233-P240-P241-P242-P243-P260-P261-P264-P264+P265-P270-P271-P280-P301+P317-P301+P330+P331-P302+P352-P302+P361+P354-P303+P361+P353-P304+P340-P305+P354+P338-P316-P317-P321-P330-P362+P364-P363-P370+P378-P403+P235-P405-P501  Details
Hazard Classification
up    Details
HazardClassCategory CodeHazard Statement
Acute toxicityAcute Tox.4H302
Skin corrosionSkin Corr.1BH314
Acute toxicityAcute Tox.4H312
Acute toxicityAcute Tox.4H332
Flammable liquidsFlam. Liq.2H225
Serious eye damageEye Dam.1H318
Flammable liquidsFlam. Liq.3H226
Substances or mixtures which in contact with water emit flammable gasesWater-react.1H260
Transport InformationUN 2924
SDSAvailable
up Discovery and Applications
Tetrakis(dimethylamino)tin is an organotin compound with significant applications in materials science and organometallic chemistry. It consists of a tin atom coordinated to four dimethylamino groups, giving it the molecular formula Sn(NMe2)4. The compound is typically a colorless liquid and is air- and moisture-sensitive, requiring careful handling in inert environments. The discovery of tetrakis(dimethylamino)tin stemmed from the broader exploration of organometallic compounds for their potential in catalysis and materials synthesis, particularly in the semiconductor industry.

One of the primary applications of tetrakis(dimethylamino)tin is as a precursor in atomic layer deposition (ALD), a process used in the fabrication of thin films for semiconductor devices. Its volatility and thermal stability make it suitable for use in ALD processes, where precise, atomically thin layers of tin-containing compounds are deposited onto substrates. These films are crucial in developing advanced electronic components such as transistors and memory devices. Tetrakis(dimethylamino)tin is often used in the deposition of tin oxide (SnO2) or other tin-based materials, which are valued for their electrical conductivity and transparency.

In addition to its role in ALD, tetrakis(dimethylamino)tin is used in the synthesis of organotin compounds that serve as catalysts in organic reactions. Organotin compounds are known for their ability to catalyze a wide range of chemical transformations, including polymerization and coupling reactions. The presence of the dimethylamino ligands in tetrakis(dimethylamino)tin enhances its reactivity and solubility, making it an effective catalyst precursor in various synthetic processes.

The compound's versatility in both materials science and catalysis has made it an important focus in research aimed at developing more efficient and precise chemical processes. Its reactivity with different ligands and substrates allows for the customization of its chemical properties, making it adaptable to a wide range of applications in both industrial and academic settings.

Tetrakis(dimethylamino)tin continues to be explored for its potential in developing new materials with improved electronic and catalytic properties. Its unique molecular structure and favorable physical properties make it a valuable tool in advancing technologies in the semiconductor industry and beyond.

References

2007. Metallocanes of group 14 elements 2. Derivatives of tin (Review). Chemistry of Heterocyclic Compounds, 43(7), 819-835.
DOI: 10.1007/s10593-007-0132-8

2003. C8H24N4Sn, Tetrakis(dimethylamino)stannane. Molecules Containing Five or More Carbon Atoms, 258-259.
DOI: 10.1007/10735542_743

1982. A study of the electron-donating capacity of tin-containing amines by the IR-spectroscopic method. Bulletin of the Academy of Sciences of the USSR, Division of chemical science, 31(6), 1130-1134.
DOI: 10.1007/bf00955967
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