Hafnium tetradimethylamide
[CAS# 19782-68-4]

Identification

• Classification: Organic raw materials >> Organometallic compound >> Organic germanium, cobalt, strontium, barium, gallium, germanium, germanium, germanium, germanium, etc.
• Name: Hafnium tetradimethylamide
• Synonyms: Dimethylamine hafnium(4+) salt; Hafnium(4+) dimethylamide; Tetrakis(dimethylamido)hafnium; Tetrakis(dimethylamino)hafnium
• Molecular Formula: 4(C₂H₇N).Hf
• Molecular Weight: 358.82
• CAS Registry Number: 19782-68-4 (19962-11-9)
• EC Number: 629-069-0
• SMILES: C[N-]C.C[N-]C.C[N-]C.C[N-]C.[Hf+4]

Properties

• Density: 1.098 g/mL
• Melting point: 26-29 °C
• Boiling point: 85 °C (0.1 mmHg)

Safety Data

• Hazard Symbols: GHS02;GHS05 Danger
• Risk Statements: H228-H261-H314-H318
• Safety Statements: P210-P231+P232-P240-P241-P260-P264-P264+P265-P280-P301+P330+P331-P302+P361+P354-P304+P340-P305+P354+P338-P316-P317-P321-P363-P370+P378-P402+P404-P405-P501

Hazard Classification

Hazard	Class	Category Code	Hazard Statement
Skin corrosion	Skin Corr.	1B	H314
Flammable solids	Flam. Sol.	1	H228
Substances or mixtures which in contact with water emit flammable gases	Water-react.	2	H261
Serious eye damage	Eye Dam.	1	H318
Flammable liquids	Flam. Liq.	2	H225

Discovery and Applications

Hafnium tetradimethylamide, with the chemical formula Hf(NMe₂)₄, is a significant organometallic compound that has found diverse applications in materials science and chemical synthesis. This compound, consisting of a hafnium atom centrally coordinated by four dimethylamide groups, offers unique properties and capabilities due to its structure and bonding.

The discovery of hafnium tetradimethylamide is linked to the exploration of transition metal amides and their applications in various chemical processes. The synthesis of Hf(NMe₂)₄ involves the reaction of hafnium tetrachloride with dimethylamine, leading to the formation of this tetradimethylamide complex. The resulting compound features a tetrahedral coordination geometry around the hafnium center, with each amide group providing a donor site for bonding.

One of the primary applications of hafnium tetradimethylamide is in the field of chemical vapor deposition (CVD). The compound is used as a precursor in the deposition of hafnium-based thin films and coatings. These films are essential in the fabrication of advanced electronic devices, particularly in semiconductor technology. The use of Hf(NMe₂)₄ in CVD processes enables the formation of high-quality hafnium oxide films, which are utilized as dielectric materials in capacitors and transistors due to their excellent electrical properties.

In addition to its use in CVD, hafnium tetradimethylamide is employed as a catalyst or catalyst precursor in various chemical reactions. The compound can facilitate reactions such as polymerization and cross-coupling, where its presence enhances the reactivity of substrates and promotes the formation of desired products. The unique electronic and steric properties of Hf(NMe₂)₄ make it a valuable tool in designing and optimizing chemical processes.

Hafnium tetradimethylamide is also of interest in the study of metal amides and their interactions with other ligands. Researchers use this compound to explore the behavior of transition metal amides in different chemical environments and to develop new metal-containing materials with tailored properties. The insights gained from studying Hf(NMe₂)₄ contribute to the broader understanding of coordination chemistry and the development of novel applications.

Handling hafnium tetradimethylamide requires standard safety precautions, as it is a reactive compound and may pose health hazards if not handled properly. It is important to work with this substance in well-ventilated areas and to use appropriate personal protective equipment to minimize exposure.

Ongoing research continues to investigate new applications and refine the use of hafnium tetradimethylamide in various industrial and scientific contexts. Advances in materials science and catalysis are likely to further enhance the utility of this compound and lead to the development of innovative technologies.

In summary, hafnium tetradimethylamide is an important organometallic compound with significant applications in chemical vapor deposition, catalysis, and research. Its discovery and development have contributed to advancements in materials science and chemical processes, and continued research holds promise for discovering further uses and improvements.

References

2024. Effect of the Water Pulse Duration on the Stoichiometry of HfOx Films Obtained from Tetrakis(Dimethylamino)Hafnium. *Journal of Structural Chemistry*.
DOI: 10.1134/s0022476624100184

2024. Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers. *Journal of Electronic Materials*.
DOI: 10.1007/s11664-024-11600-0

2022. Memristive structure of Nb/HfOx/Pd with controllable switching mechanisms to perform featured actions in neuromorphic networks. *Nano Research*.
DOI: 10.1007/s12274-022-4416-1